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关键词： heterojunction diode   SiC MOSFET   switching loss   on-state resistance  

摘要： A three-dimensional(3D)silicon-carbide(SiC)trench metal-oxide-semiconductor field-effect transistor(MOSFET)with a heterojunction diode(HJD-TMOS)is proposed and studied in this *** SiC MOSFET is characterized by an HJD which is partially embedded on one side of the *** the device is in the turn-on state,the body parasitic diode can be effectively controlled by the embedded HJD,the switching loss thus decreases for the ***,a highly-doped P+layer is encircled the gate oxide on the same side as the HJD and under the gate oxide,which is used to lighten the electric field concentration and improve the reliability of gate oxide *** mechanism for the HJD-TMOS is *** with the conventional device with the same level of on-resistance,the breakdown voltage of the HJD-TMOS is improved by 23.4%,and the miller charge and the switching loss decrease by 43.2%and 48.6%,respectively.

关键词： gallium oxide   E-mode   device simulation   threshold voltage  

摘要： A novel enhanced mode(E-mode)Ga_(2)O_(3) metal-oxide-semiconductor field-effect transistor(MOSFET)with vertical FINFET structure is proposed and the characteristics of that device are numerically *** is found that the concentration of the source region and the width coupled with the height of the channel mainly effect the on-state *** metal material of the gate,the oxide material,the oxide thickness,and the epitaxial layer concentration strongly affect the threshold voltage and the output *** an E-mode MOSFET device requires a large work function gate metal and an oxide with large dielectric *** the output current density of the device increases,the source concentration,the thickness of the epitaxial layer,and the total width of the device need to be *** threshold voltage decreases with the increase of the width of the channel area under the same gate *** is indicated that a set of optimal parameters of a practical vertical enhancement-mode Ga_(2)O_(3) MOSFET requires the epitaxial layer concentration,the channel height of the device,the thickness of the source region,and the oxide thickness of the device should be less than 5×10^(16) cm^(-3),less than 1.5μm,between 0.1μm-0.3μm and less than 0.08μm,respectively.

关键词： 高中物理   伏安法测电阻   实验   欧姆定律  

摘要： 在用伏安法进行电阻阻值测量时,不论是采用内接法还是外接法,都会存在系统误差。一些改进的实验方案虽然可以消除系统误差,但往往电路图相对复杂或涉及相对复杂的运算,不宜作为教学实验供学生学习。对伏安法测电阻实验进行改进,给出两种简单的测量方案,同时解决原实验方案中存在系统误差的问题。

关键词： 均流特性   阈值电压   漏电流   SiC MOSFET   高温栅偏(HTGB)试验  

摘要： 栅极一直是SiC MOSFET可靠性研究的重点,栅极老化过程中电参数之间的耦合关系对栅极可靠性研究有至关重要的作用。为此,搭建了能够同时监测阈值电压和栅极漏电流的高温栅偏(HTGB)试验平台。研究了HTGB下阈值电压和漏电流的退化趋势和影响,基于氧化层注入电荷量深入分析了两者之间的耦合关系。结果表明,热应力对载流子隧穿影响较为明显,对陷阱捕获的载流子影响相对较小,而场强则对两者均具有显著的影响。此外,提出了减小阈值电压漂移对SiC MOSFET均流特性影响的方法,指出了栅极漏电流下降现象的本质是栅极陷阱充电,并给出了栅极老化过程中漏电流失效基准值选取的方法。该研究结果为深入理解SiC MOSFET的栅极失效机理提供了理论指导。

关键词： 欧姆定律   伏安法   归纳分析   实验结论   数据处理  

摘要： "欧姆定律"是初中物理基本而重要的知识点,"伏安法"测电阻延续了它的内容,其中的实验操作与数据分析都是中考与实验考核中最常见的项目.通过考核,可以洞察学生的操作力、观察力、发现力和分析力,这对于学生思维能力的发散、科学方法的使用和科学态度的培养都起着重要的促进作用.

关键词： 参与式学习   运用与实践   叠加定理   目标导向   电路课程   《电路》课程   电路教学   教学环节  

摘要： BOPPPS教学模式是一种以教学目标导向、以学生为中心的教学模式。该教学模式由导言、目标、前测、参与式学习、后测、总结六个教学环节构成。本文以电路课程中的叠加定理为例综合运用BOPPPS教学模式,课堂以学生为主体,通过“学中做、做中学”,由原来的以教师为中心的教学模式向以学生为中心的教学模式转变。使学生快速熟悉电路分析的方法,提高学生解决实际问题的能力,同时进一步提高教师在电路教学的水平和质量。

关键词： 初中物理   加涅教学设计原理   学习目标   教学事件  

摘要： 提高课堂教学质量的一个重要环节是优化教学设计,要求教师以教学理论为指导,以学生和教材为基础,将教学理论应用于实际,最终促进学生的全面发展。本文运用文献法,以“欧姆定律”教学为例,阐述了加涅教学设计原理在初中物理教学中的应用。

关键词： 科学探究   差异教学   欧姆定律  

摘要： 科学探究是学生主动获取科学知识、领悟科学研究方法的一种实践活动。学生是否能很好地参与到科学探究的活动中,受到学生个体差异的影响。文章探讨在科学探究过程中如何实施差异教学,进而促进学生科学探究能力进一步提升。

关键词： 功率半导体   电子电气设备   MOSFET   功率等级   第三代半导体材料   高温特性   工作频率   SiC  

摘要： 碳化硅(SiC)是第三代半导体材料,在功率半导体领域具有广阔市场空间。功率半导体在电子电气产业中不可或缺,其直接影响电子电气设备的性能与成本。与传统的Si MOSFET相比,相同功率等级的SiC MOSFET在工作频率、高温特性、稳定性等方面得到提高,能耗得到降低,是一种新型MOSFET产品。

关键词： SiC MOSFET   Monte Carlo method   TCAD   single event burnout   lattice temperature  

摘要： The energy deposition and electrothermal behavior of SiC metal-oxide-semiconductor field-effect transistor(MOSFET)under heavy ion radiation are investigated based on Monte Carlo method and TCAD numerical *** Monte Carlo simulation results show that the density of heavy ion-induced energy deposition is the largest in the center of the heavy ion *** time for energy deposition in SiC is on the order of *** TCAD is used to simulate the single event burnout(SEB)sensitivity of SiC MOSFET at four representative incident positions and four incident *** heavy ions strike vertically from SiC MOSFET source electrode,the SiC MOSFET has the shortest SEB time and the lowest SEB voltage with respect to direct strike from the epitaxial layer,strike from the channel,and strike from the body diode *** current and strong electric field simultaneously appear in the local area of SiC MOSFET,resulting in excessive power dissipation,further leading to excessive high lattice *** gate-source junction area and the substrate-epitaxial layer junction area are both the regions where the SiC lattice temperature first reaches the SEB critical *** the SEB simulation of SiC MOSFET at different incident depths,when the incident depth does not exceed the device's epitaxial layer,the heavy-ion-induced charge deposition is not enough to make lattice temperature reach the SEB critical temperature.