关键词:
Radiotherapy
Peripheral
dose
Metal
oxide
semiconductor
field
effect
transistor
Dosimeter
摘要:
AIM:To study the peripheral dose(PD) from highenergy photon beams in radiotherapy using the metal oxide semiconductor field effect transistor(MOSFET) dose verification ***:The radiation dose absorbed by the MOSFET detector was calculated taking into account the manufacturer's Correction Factor,the Calibration Factor and the threshold voltage *** measurements were carried out for three different field sizes(5 cm×5 cm,10 cm×10 cm and 15 cm×15 cm) and for various depths with the source to surface distance set at 100 *** measurements were realized on the central axis and then at distances(1 to 18 cm) parallel to the edge of the field,and were expressed as the percentage PD(% PD) with respect to the maximum dose(dmax).The accuracy of the results was evaluated with respect to a calibrated 0.3 cm3 ionization *** reproducibility was expressed in terms of standard deviation(s) and coefficient of ***:% PD is higher near the phantom surface and drops to a minimum at the depth of dmax,and then tends to become constant with *** scatter radiation is the predominant source of PD and the depth dependence is determined by the attenuation of the primary *** to the field edge,where internal scatter from the phantom dominates,the % PD increases with depth because the ratio of the scatter to primary increases with depth.A few centimeters away from the field,where collimator scatter and leakage dominate,the % PD decreases with depth,due to attenuation by the *** % PD decreases almost exponentially with the increase of distance from the field *** decrease of the % PD is more than 60% and can reach up to 90% as the measurement point departs from the edge of the *** a given distance,the % PD is significantly higher for larger field sizes,due to the increase of the scattering ***,the measured PD obtained with MOSFET is higher than that obtained with an ionization chamber with percentage differences be