关键词:
power MOSFET ZTC threshold voltage mobility
摘要:
The paper investigates the zero temperature coefficient(ZTC) point of power MOSFET,based on the output characteristic of power MOSFET,the temperature coefficient of threshold voltage and the carrier *** is found that the gate voltage has a big effect on the ZTC *** result indicates that there are three types of temperature coefficient under different gate *** the gate voltage is near the threshold voltage,both the linear region and saturation region shows a large positive temperature *** the increase of gate voltage,the temperature coefficient of the linear region changes from positive to negative,when the saturation region still remains positive,giving rise to the ZTC *** the gate voltage is high enough,the negative temperature coefficient is present on both the linear and saturation region,resulting in no ZTC *** to the experimental result,the change of ZTC point as a function of temperature is larger when the gate voltage is *** carrier mobility is also discussed,displaying a positive temperature coefficient at low gate voltage due to the free charge screen effect.