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关键词： 驱动电压   转换电路   损耗   驱动不足  

摘要： 提出了一种功率MOSFET驱动电路。首先介绍了MOSFET的驱动要求及驱动不足产生的影响,然后介绍了一种外置式转换驱动电压的驱动电路,最后通过仿真验证了外置式转换驱动电压的驱动电路。

关键词： 欧姆定律   防撬报警器   夜晚照明   适合家庭  

摘要： 电子信息和网络技术的高速发展以及我国天网工程的逐渐完善,社会治安相对于以往已有了很大改善。但是,在一些偏远或人口混杂的商住区时常会发生一些入室犯罪的案件,此类地方正有待于我们提高安全意识并合理有效地做好安全防护措施。目前大多数防盗报警器都是为大型或重要场所设置的,且价格昂贵,并需要专业安装调试,而真正适合家庭安装的比较少。基于中学物理所学的欧姆定律的基本原理,结合日常生活中的经验常识,设计出一款适合大多数家庭的防撬报警器,该报警器简易低廉,易于安装调试,工作合理可靠。

关键词： 电路   电阻   串联  

摘要： 滑动变阻器在两点之间滑动时,电路中的电阻会发生变化,并且由此引起电压、电流都会发生变化,下面我们就一起来分析一下这方面的问题.

关键词： 碳化硅   MOSFET   电热耦合   Matlab/Simulink  

摘要： 为在Matlab/Simulink环境下准确预测碳化硅Si C(silicon carbide)功率器件在实际工况下的结温变化,针对Si C MOSFET器件提出了一种基于时变温度反馈的电热耦合模型建模方法。该方法能更好地反映Si C MOSFET在导通和开关过程中的性能特点,模型从器件物理分析和工作机理出发,将功率损耗和热网络模块引入建模,实时反馈器件结温和更新温度相关参数。采用CREE C2M0160120D Si C MOSFET器件进行测试,根据制造商数据手册和测试实验中提取,仿真结果证实了该建模方法的正确性,为器件的寿命预测和可靠性评估提供了研究基础。

关键词： 恒流源   高稳定度   串联负反馈   MOSFET并联均流  

摘要： 提出了一种基于多MOSFET并联均流的高稳定度大电流恒流源研究方案,输出电流最高可达30 A且连续可调,输出30 A时,30分钟内电流稳定度优于5 ppm。文中详细分析了恒流源基本稳流电路的工作原理,并对电路中关键元器件的选型进行了分析说明。通过高精度基准电压芯片和基于大功率精密电阻采样的电流串联负反馈方法提高系统的稳流精度,通过多只功率MOSFET并联均流工作作为调整管,实现了输出大电流的高稳定度,同时对影响功率MOSFET并联工作的因素进行了系统分析。提出的恒流源方案,对高稳定度直流电源的设计具有一定的参考价值。

关键词： 纳米MOSFET   噪声测试   低温装置   电流噪声   散粒噪声   热噪声  

摘要： 针对常规纳米尺度电子元器件的噪声特性,研究其噪声的基本测试条件,并建立测试系统。在屏蔽条件下采用低温装置和超低噪声前置放大器,能有效抑制外界干扰。应用该系统对实际纳米MOSFET器件进行噪声测试得到其电流噪声,在测试基础上通过计算分别得到热噪声和散粒噪声,同时分析器件工作在亚阈区和反型区下的电流噪声随源漏电压和电流的变化关系。结果表明测试结果与理论分析吻合,验证了测试系统的准确性。

关键词： CMOS   nm   MOSFET   Recent research development of FinFETs  

摘要： The rapid development of by the device scaling down. encountered difficulties and CMOS technology is driven Classical MOS devices have challenges as scaling down to nanoscale [1], which seriously affects the device performance and limits the further development of CMOS technology. Because of the excellent control over short-channel effects and high current drive capability, novel multi-gate MOS devices have been regarded for years as the most attractive devices to continue the CMOS technology development following ＂Moore＇s law＂ [2]. Among which FinFET, mainly proposed by Hisamoto et al.

关键词： Theoretical   Simulation   Nano-MOSFET   Transistor Level   Quasi-Ballistic  

摘要： This paper presents the quasi-ballistic electron transport of a symmetric double-gate (DG) nano-MOSFET with 10 nm gate length and implementation of logical NOT transistor circuit using this nano-MOSFET. Theoretical calculation and simulation using NanoMOS have been done to obtain parameters such as ballistic efficiency, backscattering mean free path, backscattering coefficient, critical length, thermal velocity, capacitances, resistance and drain current. NanoMOS is an on-line device simulator. Theoretical and simulated drain current per micro of width is closely matched. Transistor loaded NOT gate is simulated using WinSpice. Theoretical and simulated value of rise time, fall time, propagation delay and maximum signal frequency of logical NOT transistor level circuit is closely matched. Quasi-ballistic transport has been investigated in this paper since modern MOSFET devices operate between the drift-diffusion and ballistic regimes. This paper aims to enable modern semiconductor device engineers to become familiar with both approaches.

关键词： Threshold Voltage   Constant Current Source Technique   Linear Extrapolation Technique   Threshold Voltage Estimation Techniques   Short Channel Effects   Drift Diffusion Model   Resistive Load Inverter   Noise Margin Analysis  

摘要： Threshold voltage (V_TH) is the most evocative aspect of MOSFET operation. It is the crucial device constraint to model on-off transition characteristics. Precise V_TH value of the device is extracted and evaluated by several estimation techniques. However, these assessed values of V_TH diverge from the exact values due to various short channel effects (SCEs) and non-idealities present in the device. Numerous prevalent V_TH extraction methods are discussed. All the results are verified by extensive 2-D TCAD simulation and confirmed through analytical results at 10-nm technology node. Aim of this research paper is to explore and present a comparative study of largely applied threshold extraction methods for bulk driven nano-MOSFETs especially at 10-nm technology node along with various sub 45-nm technology nodes. Application of the threshold extraction methods to implement noise analysis is briefly presented to infer the most appropriate extraction method at nanometer technology nodes.

关键词： SiC645/SiC645A   功率级   存储器   处理器   存贮器   计算机   智能功率   MOSFET   Vishay 60A VRPower  

摘要： Vishay宣布,为了在高性能电信设备和数据中心服务器中实时地对处理器和存储器的功耗进行监控,推出两个新的60A VRPower智能功率级SiC645和SiC645A。功率级集成了电流和温度监测器,可用于多相DC/DC系统。Vishay Siliconix SiC645和SiC645A把功率MOSFET、先进的驱动IC和1个启动FET组合在热增强的薄外形5mm×5mm×0.66mm PowerPAK MLP55-32L/QFN封装里,有效简化设计,精度高于类似的标准DrMOS产品,同时占位面积比相近的对标器件小16%。